About Advisor

About Dr. Shanthi Iyer

Professor of Nanoengineering specializing in molecular beam epitaxy, nanowire-based photodetectors, III-V semiconductors, and optoelectronic devicess.

Prof. Iyer initiated and developed NCA&TSU’s state-of-the-art Molecular Beam Epitaxy (MBE) Laboratory and associated academic and research programs. She has been a PI of over $10 million in DoD research projects. She was also the Director of the Center of Excellence for Battlefield Capability Enhancements, which focused on developing technologies for environmentally stable flexible panel displays.   Her current research interests are molecular beam epitaxial (MBE) growth, SWIR photonic sensors, multimodal characterization, device fabrication, and fabrication of GaAsSb(N) nanowire-based infrared photodetectors epitaxially integrated into Si and graphene for next-generation photonic devices. This cross-disciplinary research encompasses solid-state physics, nanoengineering, and optoelectronic devices. Her group has carried out pioneering research in semiconductor nanowires, publishing over 32 journal papers and 3 patents in the past decade, focused exclusively on GaAsSb(N) nanowire growth, characterization, and high-performance photodetectors integrated on Si and graphitic substrates.

Specializations

Nanoengineering Molecular Beam Epitaxy Nanowire-based Photodetectors III-V Semiconductors Optoelectronic Devices MBE Growth SWIR Photonic Sensors Multimodal Characterization Device Fabrication

Patents

  1. Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma, "High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell nanowires", US Patent No. 12221719B2, Feb. 11, 2025; Filed Jan. 20, 2024.
  2. S.Iyer, Jia Li, Prithviraj Deshmukh, and Manish Sharma "High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell–Shell Nanowires", US Patent No. 11,905,622, Feb. 20, 2024; U.S. Serial No. 17/229,066 – Publication No. US2021/0317598 A1, Pub. Date: Oct. 14, 2021, Filed: April 13, 2021.
  3. S.Iyer, Surya Nalamati and Jia Li, "GaAs1-xSbx Nanowires on a Graphitic Substrate", US Patent No. 11,384,286, July 12, 2022; U.S. Serial No. 17/038,175 – Publication No.: US 2021/0095199 A1, Pub. Date 04/01/2021, Filed: September 30, 2020.

Utility Patents

  1. S. Iyer, H. Kuchoor and Jia Li, "GaAsSb Core-Shell Nanowire Photodetector Grown on Graphitic Substrate and Preparation Method Thereof", U.S. Utility Patent Application No.: 19/270,692; filed 07/16/2025.
  2. S.Iyer, Shisir Devkota, Mehul Parakh, Rabin Pokharel, Priyanka Ramaswamy, Kendall Dawkins and Jia Li, "Group III-V Nanowire-based Avalanche Photodiode", U.S. Utility Patent Application No.: 18/812,362 – Pub. No.: US 2025/0072128 A1, Pub. Date 02/07/25; filed Aug. 22, 2024.
Advisor

Contact Information

Email

iyer@ncat.edu

Address

1601 E. Market Street, Greensboro, NC 27411

Education

Ph.D. 1983

Indian Institute of Technology, Delhi, India

Professional Experience

Develop 7 different courses in the areas of microelectronics and nanotechnology.

NC A&T

Editorial Board Member of Scientific Reports

USA

Organizing Committee Members of Carolina Science Symposium

USA

Electronics Materials Conference

USA

Training & Certifications

Molecular Beam Epitaxy

JSNN

Photodetectors Dilute Nitride GaAsSbN Nanowires based High Speed Near-Infrared Photodetectors.

JSNN

GaAsSb/GaAsSbN Heterostructure Nanowires-based Short Wavelength Infrared Photodetectors Dilute Nitride GaAsSbN

JSNN

Awards & Recognition

2025 Intellectual Property Award

NCA&TSU

2024 and 2019 Advising Excellence Award

NCA&TSU

2023 Intellectual Property Award

NCA&TSU

2006 Outstanding Researcher Award

NCA&TSU

1993 Excellence in Research in College of Engineering

NCA&TSU