During his doctoral studies from 2017 to 2022, Dr. Pokharel conducted his research in Dr. Shanthi Iyer's Molecular Beam Epitaxy (MBE) group at JSNN. His highly impactful work focused on growing III-V semiconductor nanowires via MBE to build near-infrared photodetectors. His dissertation explored GaAs/GaAsSbN Schottky and GaAs/GaAsSb core-shell avalanche nanowire photodetectors.

Dr. Pokharel's academic research has yielded 13 listed works, including first-author publications in ACS Applied Electronic Materials and ACS Applied Nano Materials. Furthermore, his research contributions led to his recognition as a co-inventor on a U.S. patent application for a Group III-V nanowire-based avalanche photodiode, which was developed within Dr. Iyer's group.

Today, Dr. Pokharel applies his expertise on the front lines of the American semiconductor industry as a Senior Field Process Engineer at ASM America, Inc., in Portland, Oregon. In this role, he develops advanced epitaxial process technologies that support high-volume chip manufacturing at cutting-edge 2-nanometer-class technology nodes. His career demonstrates a seamless translation of skills, bridging nanoscale crystal growth in a university lab with high-volume epitaxy processes at a major equipment supplier.

Originally from the rural district of Dhading, Nepal, Dr. Pokharel came to the United States as a first-generation international scholar. Despite his demanding industry career, he continues to give back by volunteering with JCI Nepal and generously mentoring younger researchers and current students following in his footsteps in the Iyer lab.